Infrared Phototransistor
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NPN phototransistor in clear 5mm transparent LED houing.
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Features:
– NPN Collector-to-Emmiter Breakdown voltage: 30V
– Emitter-to-Collector Breakdown voltage: 5V
– Collector-to-Emmiter Saturation voltage: 0.8V Max
– Rise and Fall time: 3uS @ 5V(Vce)
– Breakdown voltage: 5V
– Collector: Short Leg
– Emitter: Long Leg
Specifications:
| Dark Current | 100 |
| Power Dissipation | 100 |
Downloads
- Download Datasheet
