Infrared Phototransistor
table, th, td {border: 1px solid #ddd;border-collapse: collapse;}table {width: 100%; }td {width: 50%; padding: 8px;} tr:nth-child(even){background-color: #f2f2f2;}
NPN phototransistor in clear 5mm transparent LED houing.
Â
Features:
– NPN Collector-to-Emmiter Breakdown voltage: 30V
– Emitter-to-Collector Breakdown voltage: 5V
– Collector-to-Emmiter Saturation voltage: 0.8V Max
– Rise and Fall time: 3uS @ 5V(Vce)
– Breakdown voltage: 5V
– Collector: Short Leg
– Emitter: Long Leg
Dark Current | 100 |
Power Dissipation | 100 |
Downloads
- Download Datasheet